attached is a document showing fotos of all involved amplifiers in the chain to document the manual settings active during the experiment.

Summary:
Si-pad n-sides [MSI-8 (1)] were set to 5 GeV      (expected E-deposition ~2 GeV)
Si-pad p-sides [MPR-32 (1 & 2)] were set to 1 GeV (expected E-deposition ~2 GeV)
DSSD channels  [MSI-8 (2)] were set to 5 GeV      (expected E-deposition ~1.2 GeV)
CsI channels   [MSI-8 (2)] were set to 4 GeV      (expected E-deposition  46 GeV)

It seems we got clipped signals from the Si-pad p-sides, because the MPR-32 were saturated due to a wrong gain setting. 
This might explain, why there was not real influence on the spectra when adjusting MSCF settings for those channels.
 
I cannot comment on the CsI gain setting, because i don't know whether the given GeV-range by MesyTec directly applies for CsI & photodiode.

However, for DSSD and Si-pad n-sides the settings look okay.